In this paper presents that samples of silicon with acceptor impurities have a greater static and lower dynamic strain sensitivity than silicon samples with donor and amphoteric impurities. And samples of silicon with amphoteric impurities, almost does not have static components of strain sensitivity at pulse hydrostatic pressure. In such samples, the strain sensitivity is related only to the temperature and relaxation effects.
R. Kh., Khamidov and O., Mamatkarimov
"CALCULATION OF COMPONENTS OF DEFORMATION SENSITIVITY OF SILICON SAMPLES WITH DEEP IMPURITY LEVELS,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 3:
40, Article 8.
Available at: https://uzjournals.edu.uz/semiconductors/vol3/iss40/8