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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The temperature dependence of the energy spectrum of semiconductors is well explained by the thermal broadening of discrete energy spectra. The temperature dependence of the band gap is considered as broadening of the energy states of the conduction and valence bands. In these works, it was assumed that the effective mass of the density of states does not depend on temperature. However, as experiments have shown, the effective mass of the density of states depends on temperature. These changes in the effective mass change the temperature dependence of the band gap.

First Page

38

Last Page

42

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