Euroasian Journal of Semiconductors Science and Engineering
Abstract
The energy spectrum of free holes in a strong magnetic field is calculated for a non-quadratic dispersion law. The temperature dependence of the broadening of the Landau levels of holes in crystals with the Kane dispersion law has been studied. A new method for calculating the discrete energy spectrum in a quantizing magnetic field is proposed.
First Page
66
Last Page
71
Recommended Citation
M.G., Dadamirzayev
(2021)
"CALCULATION THE TEMPERATURE DEPENDENCE THE ENERGY SPECTRUM OF CHARGE CARRIERS IN SEMICONDUCTORS EXPOSED TO A STRONG MAGNETIC FIELD,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 3:
Iss.
40, Article 11.
Available at:
https://uzjournals.edu.uz/semiconductors/vol3/iss40/11
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