•  
  •  
 

Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

This article considers the temperature dependence of the band gap in quantum-well heterostructures in the presence of a transverse quantizing magnetic field. An analytical expression is obtained for determining the band gap of a rectangular quantum well at various magnetic fields and temperatures. The proposed formulas well explain the experimental results obtained for quantum-well semiconductor structures.

First Page

60

Last Page

65

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.