Euroasian Journal of Semiconductors Science and Engineering
Article Title
Abstract
This article considers the temperature dependence of the band gap in quantum-well heterostructures in the presence of a transverse quantizing magnetic field. An analytical expression is obtained for determining the band gap of a rectangular quantum well at various magnetic fields and temperatures. The proposed formulas well explain the experimental results obtained for quantum-well semiconductor structures.
First Page
60
Last Page
65
Recommended Citation
N.А., Sаyidоv; R.G., Rаkhimоv; J.I., Mirzaev; and U.B., Negmatov
(2021)
"EFFECTS OF TEMPERATURE AND A TRANSVERSAL QUANTIZING MAGNETIC FIELD ON THE FORBIDDEN BAND OF A QUANTUM WELL,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 3:
Iss.
40, Article 10.
Available at:
https://uzjournals.edu.uz/semiconductors/vol3/iss40/10