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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The methods of description of semiconductor-insulator interface characteristics based on process change of MIS type structure was considered. By using Maple Software, the calculations of quantities of inversion layer charge, total charge of semiconductor, inversion layer width and SCR semiconductor total width were made. Also, dependence theses quantities from doping level, temperature and surface potential were obtained.

First Page

41

Last Page

46

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