It was found in the work that for p-and-n-photodiodes on the reverse branch current-voltage characteristic, steps are observed in the region of voltages of 25 and 70 V due to the terminology-intensive procedure for changing the environment.
V.B., Odzhaev; A.N., Petlitsky; V.S., Prosolovich; and V.A., Filipenya
"ELECTROPHYSICAL PARAMETERS OF p-i-n-PHOTODIODES,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 3:
2, Article 6.
Available at: https://uzjournals.edu.uz/semiconductors/vol3/iss2/6