Euroasian Journal of Semiconductors Science and Engineering
Article Title
Abstract
In this paper, a mathematical model of the change in the current-voltage characteristics of the p-n junction under the influence of light and microwave fields is proposed.
First Page
29
Last Page
34
Recommended Citation
G., Gulyamov; B.B., Shakhobiddinov; G.N., Majidova,; and F.R., Mukhiddinova
(2021)
"EFFECT OF ULTRAHIGH FREQUENCY FIELDS ON THE PHOTOELECTRIC CHARACTERISTICS OF P-N CONDUCTING SEMICONDUCTOR DIODES,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 3:
Iss.
2, Article 5.
Available at:
https://uzjournals.edu.uz/semiconductors/vol3/iss2/5
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