The effect of uniform compression on the properties of n-Si Schottky diode based on overcompensate semiconductor has been studied. It was shown that overcompensation is a result of structure defects generation in the thermo treatment of the starting silicon wafer.
Sh.Kh., Daliev and F.A., Saparov
"EFFECT OF THE PRESSURE ON THE PROPERTIES OF SCHOTTKY DIODE BASED ON OVERCOMPENSATE SEMICONDUCTOR,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 3:
2, Article 4.
Available at: https://uzjournals.edu.uz/semiconductors/vol3/iss2/4