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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

In this work, it is shown that the introduction of nickel atoms in the process of growing a silicon crystal makes it possible to obtain a material with stable electrophysical parameters during thermal annealing at a temperature of 450 ℃ and durations t = 0.5 ÷ 25 hours. This is the most cost-effective way to create a material for semiconductor devices with stable parameters.

First Page

16

Last Page

19

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