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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The method of digital modelling investigates influence of temperature on photo-electric processes in silicon solar cells. Feature of program system “Sentaurus TCAD” which allowed to model silicon solar cells with flat p-n-junction is described. Are calculated of the I-V characteristic of the solar cells containing platinum nanoparticles and without them at a variation of temperature in a range 250÷350 K. Sizes of the basic photo-electric parameters of solar cells for various values of temperature are defined.

First Page

57

Last Page

63

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