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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

In this paper, we studied the effect of Co60 gamma-ray irradiation on the optical characteristics of single and several compressed-stressed CdxZn1-xSe/ZnSe QCS with the composition x=0.2-0.4 grown by molecular beam epitaxy. Photoluminescent properties of a series of samples with single and multiple wells of the same thickness and different composition as well as different thickness of the same composition were studied. The spreading of quantum wells after gamma-ray irradiation was studied.

References

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