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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The two-band model is used to calculate the cyclotron mass of an electron in an InAs quantum well. The calculations were performed in the approximation of infinity of the depth of the quantum well, taking into account the Landau level of the second subband. It is shown that taking into account the cyclotron transition of electrons within the second subband satisfactorily describes the experimental data obtained in strong magnetic fields in the heterostructure InAs/In0.81Ga0.19As/InxAl1−xAs.

References

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