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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

Processes of current transport in p-n- structure obtained on the base of linear graded-band semiconductor are researched. Principal equation at conditions of quasielectrical fields for electrons and holes was obtained. It has been shown that in linear graded semiconductors structures saturation current increases.

References

1. Valiev K.A., Vjurkov V.V., Orlikovskiy A.A. Kremnievaya nanoelektronika: problemy i perspektivy. [Silicon Nanoelectronics: Challenges and Prospects]. Uspehi sovremennoy radioelektroniki. [Successes of modern radio electronics], 2010, No. 6, pp. 7-22. (In Russian). 2. Kulakova L.A., Meleh B.T., Grudinkin S.A., Danilov A.P. Ge−Te−Se- i Ge−Te−Se−S-splavy – novye materialy dlja akustoopticheskih ustrojstv blizhnego, srednego i dal'nego infrakrasnyh diapazonov. [Ge − Te − Se- and Ge − Te − Se − S-alloys – new materials for acoustooptic devices of the near, middle and far infrared ranges]. Fizika i tehnika poluprovodnikov. [Physics and Semiconductor Engineering], 2013, Vol. 47, Issue 10. pp. 1435-1439. (In Russian). 3. Bolhovitjanov Yu.B., Gutakovskiy A.K., Derjabin A.S., Pcheljakov O.P., Sokolov L.V. Vozmozhnosti i osnovnye principy upravlenija plasticheskoj relaksaciej plenok GeSi/Si i Ge/Si stupenchato izmenjaemogo sostava. [Capabilities and basic principles of control of plastic relaxation of films of GeSi/Si and Ge/Si stepwise variable composition]. Fizika i tehnika poluprovodnikov. [Physics and Semiconductor Engineering], 2008, Vol. 42, Issue. 1. pp. 3-22. (In Russian). 4. Hvostikov V.P., Sorokina S.V., Hvostikova O.A., Timoshina N.H., Potapovich N.S., Ber B.Ya., Kazancev D.Yu., Andreev V.M. Vysokojeffektivnye fotojelementy na osnove GaSb. [Highly efficient photocells based on GaSb]. Fizika i tehnika poluprovodnikov. [Physics and Semiconductor Engineering], 2013, Vol. 47, Issue 2. pp. 273-279. (In Russian). 5. Skachkov A. F. GaInP Semiconductor Compounds Doped with the Sb Isovalent Impurity. Semiconductors, 2015, Vol. 49 No. 5. pp 579-581. 6. Rakovics V., Imenkov A.N., Sherstnev V.V., Serebrennikova O.Yu., Il'inskaya N.D., Jakovlev Yu.P. Moshhnye svetodiody na osnove geterostrukturInGaAsP/InP. [Powerful LEDs based on heterostructur InGaAsP/InP]. Fizika i tehnika poluprovodnikov. [Physics and Semiconductor Engineering], 2014, Vol. 48, Issue 12. pp. 1693-1696. (In Russian). 7. Klimko G.V., Sorokin S.V., Sedova I.V., Gronin S.V., Liachi F., Kajbyshev V.H., Sevrjuk V.A., Brunkov P.N., Sitnikova A.A., Toropov A.A., Ivanov S.V. Molekulyarno-puchkovaja jepitaksija gibridnyh AlGaAs/Zn(Mn)Senanostruktur s kvantovymi tochkami InAs/AlGaAs vblizi geterovalentnogo interfeysa. [Molecular beam epitaxy of hybrid AlGaAs/Zn (Mn) Sinanostructures with quantum dots InAs/AlGaAs near the heterovalent interface]. Fizika i tehnika poluprovodnikov. [Physics and Semiconductor Engineering], 2014, Vol. 48, Issue 1. pp. 36-43. (In Russian). 8. Alfyorov Zh.I., Andreev V.M., Rumyancev V.D. Tendencii i perspektivy razvitija solnechnoy fotoenergetiki. [Trends and prospects for the development of solar photovoltaic energy]. Fizika i tehnika poluprovodnikov. [Physics and Semiconductor Engineering], 2004, Vol. 38, Issue 8, pp. 937-948. (In Russian). 9. Alfyorov Zh.I. Dvojnye geterostruktury: koncepciya i primeneniya v fizike, elektronike i tehnologii. [Dual heterostructures: concept and applications in physics, electronics and technology]. Uspehi fizicheskih nauk. [Successes in Physical Sciences], 2002, Vol. 174, № 9. pp. 1068-1086. (In Russian). 10. Saidov A.S., Leyderman A.Yu., Karshiev A.B. Termovol'taicheskiy effekt v varizonnom tverdom rastvore Si1-xGex (0≤ x≤ 1). [Thermal voltage effect in varizonal solid solution Si1-xGex (0≤ x≤ 1)]. Pis'ma v zhurnal tehnicheskoj fiziki. [Letters to the Journal of Technical Physics], 2016, Vol. 42, № 14. p. 21-27. (In Russian). 11. Saidov A.S., Usmonov Sh.N., Saidov M.S. Liquid-phase epitaxy of the (Si2 )1-x-y(Ge2)x(GaAs)y substitutional solid solution (0 ≤x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties. Semiconductors. 2015. Vol. 49, No.4. pp.547-550. 12. Leyderman A.Yu. O vozmozhnosti razvitija sinergeticheskih processov v poluprovodnikah s glubokimi primesjami i difektami. [On the possibility of developing synergistic processes in semiconductors with deep impurities and diphects]. Fundamental'nye i prkladnye voprosy fiziki, sbornik obzornyh nauchnyh statey. [Fundamental and applied issues of physics, a collection of review scientific articles], 2014., November 6-7, pp. 86-97. (In Russian).

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