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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Issue 1

Articles

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DISTRIBUTION OF IMPURITY ATOMS BY THE VOLUME OF MICROINCUTIONS IN SAMPLES n-Si
Zainabidinov S. Z.; Turgunov N. A.; Akbarov Sh. K.; and E.Kh. Berkinov, Mamazhonova D. Kh.

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INFLUENCE OF YTTERBIUM IMPURITY ON THE GENERATION CHARACTERISTICS OF MDP STRUCTURES
Utamuradova Sh. B., Daliyev .. Sh., and Bekmuratov .. M.

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INJECTION DIFFUSION PROCESSES IN THE WEAK LINEAR GRADED-BAND SEMICONDUCTOR p-n-STRUCTURES
Leiderman A. Yu., Saidov A. S., Usmonov Sh. N., and Abdiyev J. M.

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DEVICE FOR STUDYING TENZE SENSITIVITY IN PHOTOSENSITIVE SEMICONDUCTOR FILMS
Daliev Kh. S., Onarkulov M. K., and Otajonov S. M.

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CYCLOTRON TRANSITIONS AND ELECTRON MASS IN A WIDE INAS QUANTUM WELL IN STRONG MAGNETIC FIELDS
Gulyamov .. G., Baymatov P. J., Abdulazizov B. T., and Tokhirjonov M. S.