The possibilities of the formation of the molecular substitution solid solution (InSb)1-x(Sn2)x are investigated. Solid solutions (InSb)1-x(Sn2)x were grown from an indium melt-solution on GaAs (100) substrates. It was shown that indium antimonide in the In solution at temperatures below the melting temperature is in the form of InSb molecules; it is the necessary condition for obtaining the molecular substitution solid solution.
Saidov, A.; Usmonov, Sh.; and Asatova, U.
"FEATURES OF EPITAXY OF THE LAYERS OF SOLID SOLUTIONS (InSb)1-x(Sn2)x ON GaAs SUBSTRATES,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2:
6, Article 8.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss6/8