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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The effect of pulsed external all-round pressure on the I–V characteristics of surface-barrier diode structures is investigated. It is shown that under the adiabatic regime of exposure to HCV, the generated heat leads to short-term heating of the diode, as a result of which current relaxation is observed, which correlates with a change in temperature. The contribution of temperature to the change in current decreases with increasing applied forward voltage.

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