The effect of pulsed external all-round pressure on the I–V characteristics of surface-barrier diode structures is investigated. It is shown that under the adiabatic regime of exposure to HCV, the generated heat leads to short-term heating of the diode, as a result of which current relaxation is observed, which correlates with a change in temperature. The contribution of temperature to the change in current decreases with increasing applied forward voltage.
Mamatkarimov, O.; Khimmatkulov, O.; and Tursunov, I.
"TENZOSTIMULATED CURRENT RELAXATION IN SURFACE-BARRIER DIODE STRUCTURES,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2:
6, Article 4.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss6/4