The current flow and the appearance of thermoelectric power on uniformly heated p-n structures containing films heavily doped with titanium on the Si-Ge surface were detected under the conditions of a “thermal bath”. The results are discussed from the standpoint of the manifestation of the thermovoltaic effect, that is, the generation of charge carriers due to the absorption of subband photons with the participation of deep energy levels due to both defects in Si-Ge films and an admixture of titanium.
Kuchkanov, Sh.; Ashurov, Kh.; and Abdurahmanov, B.
"SOME THERMOELECTRIC PROPERTIES OF HETEROEPITAXIAL STRUCTURES OF Si-Ge / Si DOPED WITH TITANIUM,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2:
6, Article 3.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss6/3