•  
  •  
 

Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The current flow and the appearance of thermoelectric power on uniformly heated p-n structures containing films heavily doped with titanium on the Si-Ge surface were detected under the conditions of a “thermal bath”. The results are discussed from the standpoint of the manifestation of the thermovoltaic effect, that is, the generation of charge carriers due to the absorption of subband photons with the participation of deep energy levels due to both defects in Si-Ge films and an admixture of titanium.

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.