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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The lifetime of non-equilibrium photo generated charge carriers in the thin-film copper indium gallium selenide CIGS-based solar cell was determined under illumination with monochromatic radiation of different wavelengths (λ ≈ 395 nm, 460 nm, 630 nm, 900 nm). It was found that the lifetime of nonequilibrum charge carriers generated charge carriers depends on the absorption coefficient and radiation intensity.

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