Using quantitative Auger spectroscopy, taking into account the inverse elemental Auger sensitivity factors with matrix corrections, we calculated the distribution profiles of Li atoms in Si (111) introduced by ion implantation. It was found that at an ion energy of 1 keV in the surface region of Si (111), lithium monosilicide 15 nm thick is formed.
Nasriddinov, S.; Tursunmetova, Z.; Khuzhaniyozov, J.; and Abraeva, S.
"INFLUENCE OF TECHNOLOGICAL MODES OF ION IMPLANTATION AND FOLLOWING ANNEALING ON THE PROFILE OF DISTRIBUTION OF IMPLANTED ATOMS IN Si (111) AND Si (100),"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2:
6, Article 12.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss6/12