Using the radioactive technique and capacitive spectroscopy, it was found that the doping of Si with manganese from the layer on the surface leads to a decrease in both the total concentration of Ni and the concentration of electroactive Ni atoms. The Mn layer deposited on the Si surface acts as a getter for the Ni impurity. It is shown that with successive doping of Ni and then Mn, and simultaneous doping of silicon with Mn and Ni, only the levels characteristic of Mn are observed.
Utamuradova, Sh.; Yusupova, Sh.; and Fayzullaev, K.
"IMPURITY-IMPURITY INTERACTION IN SILICON DOPED WITH MANGANESE AND NICKEL,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2:
6, Article 1.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss6/1