Euroasian Journal of Semiconductors Science and Engineering
Issue 6
Articles
IMPURITY-IMPURITY INTERACTION IN SILICON DOPED WITH MANGANESE AND NICKEL
Sh. Utamuradova, Sh. Yusupova, and K. Fayzullaev
STATISTICS OF RECOMBINATION OF NONEQUILIBRIUM CARRIERS FOR SEMICONDUCTORS WITH PAIR RECOMBINATION COMPLEXES
A. Leyderman, A. Uteniyazov, M. Uktamova, and M. Nsanbaev
SOME THERMOELECTRIC PROPERTIES OF HETEROEPITAXIAL STRUCTURES OF Si-Ge / Si DOPED WITH TITANIUM
Sh. Kuchkanov, Kh. Ashurov, and B. Abdurahmanov
TENZOSTIMULATED CURRENT RELAXATION IN SURFACE-BARRIER DIODE STRUCTURES
O. Mamatkarimov, O. Khimmatkulov, and I. Tursunov
APPLICATION OF A SLM SOFTWARE FOR A COMPUTER-SYNTHESIZED HOLOGRAM
A. Jeenbekov, J. Ismailov, and K. Jumaliev
DEVELOPMENT OF CORRECTIVE STRUCTURAL SCHEMES FOR SEMICONDUCTOR CONVERTERS TEMPERATURE AND HUMIDITY
A. Rakhmanov, S. Kuznetsov, and S. Rakhmatullaev
SEMICONDUCTOR CHALCOGENIDE FILMS FOR RECORDING HOLOGRAPHIC INFORMATION.
M. Bekchanova, T. Azamatov, and A. Baxramov
FEATURES OF EPITAXY OF THE LAYERS OF SOLID SOLUTIONS (InSb)1-x(Sn2)x ON GaAs SUBSTRATES
A. Saidov, Sh. Usmonov, and U. Asatova
OBTAINING FULLERENE-CONTAINING THIN FILMS FROM C70 NANOPARTICLES
U. Makhmanov, A. Kokhkharov, and S. Bakhramov
NEW THERMOELECTRIC MATERIALS
G. Abdurakhmanov, K Mukimov, A Esbergenova, and S. Mamatqulova
INFLUENCE OF TECHNOLOGICAL MODES OF ION IMPLANTATION AND FOLLOWING ANNEALING ON THE PROFILE OF DISTRIBUTION OF IMPLANTED ATOMS IN Si (111) AND Si (100)
S. Nasriddinov, Z. Tursunmetova, J. Khuzhaniyozov, and S. Abraeva
THIRD-GENERATION SOLAR CELLS BASED ON THE EFFECT OF MULTI-EXCITON GENERATION IN PEROVSKITE
B. Oksengendler, F. Kamoliddinov, and M. Marasulov
THE METHOD FOR DETERMINING THE TEMPERATURE OF SOLAR CELLS IN A FLAT PHOTOVOLTAIC/THERMAL SYSTEM
O. Tukfatullin, R. Muminov, I. Rakhmatullaev, and I. Abdullaev
THE INFLUENCE OF THE SPECTRUM AND THE LEVEL OF ILLUMINATION ON THE LIFETIME OF CHARGE CARRIERS IN CIGS SOLAR CELLS
R. Kabulov and F. Akbarov
NOVEL ENGINEERED MATERIALS FOR INTEGRAL PHOTO ELEMENTS
N. Zikrillayev and E. Saitov
CHANGE OF ELECTROPHYSICAL PROPERTIES OF THE SURFACE Si (111) AND Si (100) IN THE PROCESS OF ION IMPLANTATION AND NEXT ANNEALING
A. Rysbaev, B. Igamov, M. Khudayberdieva, and A. Raximov