The behavior of gadolinium atoms in silicon was studied and it was found that diffusion doping of n-Si with gadolinium leads to a sharp increase in the resistivity. This indicates that gadolinium introduces acceptor centers in silicon. A decrease in the concentration of optically active oxygen by 10 30% was found in comparison with heat-treated control samples
Norkulov, Sh.; Daliev, Kh.; Khusanov, Z.; and Utemuratova, Kh.
"STUDYING THE PROPERTIES OF GADOLINIUM-DOPED SILICON,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2:
5, Article 9.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss5/9