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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The behavior of gadolinium atoms in silicon was studied and it was found that diffusion doping of n-Si with gadolinium leads to a sharp increase in the resistivity. This indicates that gadolinium introduces acceptor centers in silicon. A decrease in the concentration of optically active oxygen by 10  30% was found in comparison with heat-treated control samples

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