Negative differential resistance switching was observed in ZnMgO crystalline thin films grown on the p-type Si with a thin native SiO2 oxide layer by ultrasonic spray pyrolysis. The negative differential resistance switching was observed during the RESET cycle. This effect is explained by the resonant tunneling of electrons through the Ag nanoclusters in SiO2 layer after rupture of conductive silver filaments.
Abdullaev, Sh.; Sharipova, R.; and Yuldashev, Sh.
"ZnMgO/SiO2/ p- Si MEMRISTOR WITH NEGATIVE DIFFERENTIAL RESISTANCE SWITCHING,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2:
5, Article 8.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss5/8