Euroasian Journal of Semiconductors Science and Engineering
Article Title
HIGHLY SENSITIVE IR PHOTODETECTORS ON THE BASIS OF SILICON NANOCLUSTERS ATOMS OF MANGANESE
Abstract
Experimental studies of the photovoltaic properties of silicon with nanoclusters of manganese atoms and the original results obtained allow us to create highly sensitive IR photodetectors based on silicon for the region =1÷8 microns are presented. The developed silicon-based photodetectors with nanoclusters of manganese atoms provide a quantum QE efficiency of about 80%.
Recommended Citation
Zikrillayev, N.; Tachilin, S.; and Ibodullayev, Sh.
(2020)
"HIGHLY SENSITIVE IR PHOTODETECTORS ON THE BASIS OF SILICON NANOCLUSTERS ATOMS OF MANGANESE,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2:
Iss.
5, Article 6.
Available at:
https://uzjournals.edu.uz/semiconductors/vol2/iss5/6