The ability to control photosensitivity under the influence of external factors is demonstrated. It has been established that, with an increase in the potential of the corona discharge and the electric field, the spectra are mixed into the short-wave region of the spectrum, while the activation energy of the deep level of 0.70 eV changes significantly due to the Poole-Frenkel effect. The electric field strength in the vicinity of the defect E = 105 V / cm was found.
Otazhonov, S.; Alimov, N.; Movlonov, P.; and Botirov, K.
"CdTe-SiO2-Si-Al HETEROSTRUCTURE PHOTOSENSITIVITY CONTROL WITH DEEP IMPURITY LEVELS UNDER EXTERNAL FACTORS,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2:
5, Article 5.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss5/5