The effect of clusters of nickel impurity atoms on the structure of single-crystal silicon is considered. Using the electron probe microanalysis method, the typical properties of dislocation lines formed around clusters of nickel impurity atoms in silicon are studied.
Turgunov, N.; Zainabidinov, S.; Akbarov, Sh.; and Berkinov, E.
"INFLUENCE OF THE CLUSTERS OF IMPURIENT NICKEL ATOMS ON THE CRYSTALLINE SILICON STRUCTURE,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2:
5, Article 4.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss5/4