•  
  •  
 

Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

For the first time, a mathematical model has been developed to determine the influence of a extreme high frequency electromagnetic field on the temperature dependence of the Shubnikov-de Haas oscillations in narrow-gap semiconductors. Based on the proposed mathematical model and using experimental results, oscillations of the absorption of microwave radiation in semiconductor structures at high temperatures are found.

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.