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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

In this study presents results of a study of the photoelectric properties of high-efficiency heterostructure solar cells fabricated by the PECVD method. It was shown that as a result of texturing, effective passivation of the surface, optimization of the quality of a-Si:H layers, transparent conductive and current-collecting metal grid contacts on the surface of the silicon substrate, HIT solar cells were produced with an efficiency of 22.9%.

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