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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The possibility of radiation enhancing the photoconductivity of ZnSe/ZnO:O nanoheterostructures up to 10-6 Ohm-1 with the formation of a photoconductor structure, concentration of photoelectrons up to Ne=2.71017 cm-3associated with the formation of resonance levels:Г6v-5.76 eV, L1,3v-4.85 eV, Zni-3.34 eV, OSe-3.13 eV and X-2.72 eV, which is of interest for the manufacture of semiconductor scintillation and photo-detectors.

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