Euroasian Journal of Semiconductors Science and Engineering
Article Title
AMPLIFICATION OF PHOTOCONDUCTIVITY OF ZnSe/ZnO:O NANOHETEROSTRUCTURES AFTER REACTOR IRRADIATION
Abstract
The possibility of radiation enhancing the photoconductivity of ZnSe/ZnO:O nanoheterostructures up to 10-6 Ohm-1 with the formation of a photoconductor structure, concentration of photoelectrons up to Ne=2.71017 cm-3associated with the formation of resonance levels:Г6v-5.76 eV, L1,3v-4.85 eV, Zni-3.34 eV, OSe-3.13 eV and X-2.72 eV, which is of interest for the manufacture of semiconductor scintillation and photo-detectors.
Recommended Citation
Elmurotova, D.; Ibragimova, E.; Turdieva, S.; and Mussaeva, M.
(2020)
"AMPLIFICATION OF PHOTOCONDUCTIVITY OF ZnSe/ZnO:O NANOHETEROSTRUCTURES AFTER REACTOR IRRADIATION,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2:
Iss.
5, Article 13.
Available at:
https://uzjournals.edu.uz/semiconductors/vol2/iss5/13