The original technical solution is proposed that allows control the fundamental parameters of silicon by forming binary unit cells Si2AIIIBV. It is shown that the silicon with binary nanoclusters is a new semiconductor material with unique functional capabilities that allows completely replacing III – V semiconductor compounds
Bakhadyrkhanov, M.; Isamov, S.; and Kenzhaev, Z.
"NEW MATERIALS FOR PHOTOVOLTAICS AND OPTOELECTRONICS BASED ON SILICON WITH BINARY NANOCLUSTERS OF IMPURITY ATOMS WITH CONTROLLABLE PARAMETERS,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2:
5, Article 1.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss5/1