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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The results of studies of the photoelectric injection amplification of the Al-Al2O3–p-CdTe-Mo structure with high bias voltages in the forward direction of the current are presented. It has been shown that the spectral sensitivity reaches its maximum value Sλ = 8.4∙104 A/W when illuminated with "own" light with λ = 450 nm and at U = 7 V. It is established that when illuminating the structure with “own” light, a positive feedback amplification (PFA) mechanism is realized.

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