Euroasian Journal of Semiconductors Science and Engineering
Abstract
Thin metal-oxide layers of ZnO on the silicon substrate obtained by spray pyrolysis and optimal technological modes determined. It was determined that, obtained ZnO films based on silicon have a hexagonal syngony, a wurzite structure with lattice parameters, а = 0.3265 nm and c = 0.5212 nm, with block sizes of 67 nm.
Recommended Citation
Stanislav, Rembeza; Boboev, Akramjon; Men'shikova, Tat'yana; and Svistova, Tamara
(2020)
"STRUCTURAL FEATURES OF THE THIN-FILM N-ZnO/P-Si HETEROJUNCTION,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
:
Iss.
4
, Article 5.
Available at:
https://uzjournals.edu.uz/semiconductors/vol2/iss4/5
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