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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

Thin metal-oxide layers of ZnO on the silicon substrate obtained by spray pyrolysis and optimal technological modes determined. It was determined that, obtained ZnO films based on silicon have a hexagonal syngony, a wurzite structure with lattice parameters, а = 0.3265 nm and c = 0.5212 nm, with block sizes of 67 nm.

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