•  
  •  
 

Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The paper reports that the silicon sample doped with selenium at a temperature of 12000С might be considered in perspective as a high efficiency photocell. Photoelectric experiments of Si samples and the results are presented. Si with conductivity  = 1 (cm)-1 was chosen as initial material for further doping. It has been determined that the open circuit voltage under illumination reaches its peak value at a depth of 30 microns, as a result of which a p-n junction with a high-resistance p-layer tends to build.

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.