The paper reports that the silicon sample doped with selenium at a temperature of 12000С might be considered in perspective as a high efficiency photocell. Photoelectric experiments of Si samples and the results are presented. Si with conductivity = 1 (cm)-1 was chosen as initial material for further doping. It has been determined that the open circuit voltage under illumination reaches its peak value at a depth of 30 microns, as a result of which a p-n junction with a high-resistance p-layer tends to build.
Mavlyanov, A.; Urakov, A.; and Narbayev, A.
"PHOTOELECTRIC MEASUREMENTS OF SELENIUM DOPED SILICON,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
, Article 4.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss4/4