The paper describes the method and technique of contactless non-destructive testing of iron impurity concentration in p-type silicon wafers doped with acceptors based on studying the spatial distribution of minority carriers diffusion length using surface photovoltage registration with a scanning electrometric probe.
Zharin, Anatoly; Pantsialeyeu, Kanstantsin; Svistun, Aleksandr; and Tyavlovsky, Kanstantsin
"DETERMINING THE LIFETIME OF MINORITY CHARGE CARRIERS AND IRON IMPURITY CONCENTRATION IN SEMICONDUCTOR STRUCTURES WITH SUBMICRON LAYERS,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
, Article 3.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss4/3