Euroasian Journal of Semiconductors Science and Engineering
Abstract
The paper describes the method and technique of contactless non-destructive testing of iron impurity concentration in p-type silicon wafers doped with acceptors based on studying the spatial distribution of minority carriers diffusion length using surface photovoltage registration with a scanning electrometric probe.
Recommended Citation
Zharin, Anatoly; Pantsialeyeu, Kanstantsin; Svistun, Aleksandr; and Tyavlovsky, Kanstantsin
(2020)
"DETERMINING THE LIFETIME OF MINORITY CHARGE CARRIERS AND IRON IMPURITY CONCENTRATION IN SEMICONDUCTOR STRUCTURES WITH SUBMICRON LAYERS,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
:
Iss.
4
, Article 3.
Available at:
https://uzjournals.edu.uz/semiconductors/vol2/iss4/3