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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The formation of defect centers in silicon doped with iron was studied. It is shown that a single deep level with an ionization energy EV+0.41 eV is associated with iron atoms in Si, and it is quickly annealed at low temperatures. It was found that the preliminary introduction of dysprosium and ytterbium impurities into the silicon volume leads to stabilization of the properties of the iron level in silicon.

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