The effects of gas-discharge plasma contacts on the properties of semiconductor electrodes of a gas-discharge cell are investigated. Moreover, the gallium arsenide electrode has plasma contacts on both sides, and the silicon photoelectrode has ohmic and plasma contacts. On the current-voltage characteristic of the gas discharge cell, a region with negative differential resistance (HDR) based on a gallium arsenide electrode with two plasma contacts is observed. The results of theoretical and experimental studies satisfactorily coincide in the area with the HDR.
Daliyev, Khojakbar Sultanovich; Utamuradova, Sharifa Bekmuradovna; and Khaidarov, Zokirjon
"RESEARCH OF PHOTOELECTRIC PROPERTIES OF A GAS DISCHARGE CELL WITH PHOTOELECTRODES BASED ON GALLIUM ARSENIDE AND SILICON WITH PLASMA CONTACTS,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
, Article 16.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss4/16