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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The effects of gas-discharge plasma contacts on the properties of semiconductor electrodes of a gas-discharge cell are investigated. Moreover, the gallium arsenide electrode has plasma contacts on both sides, and the silicon photoelectrode has ohmic and plasma contacts. On the current-voltage characteristic of the gas discharge cell, a region with negative differential resistance (HDR) based on a gallium arsenide electrode with two plasma contacts is observed. The results of theoretical and experimental studies satisfactorily coincide in the area with the HDR.

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