it was Found that the presence of Cr, Fe, Mn and Co atoms in the silicon volume, regardless of the type and state of the introduced impurity, leads to a decrease in the efficiency of the introduction of A-centers and E-centers by several times. In addition, it was found that at high doses of radiation, the kinetics of accumulation of E-centers depends on the charge state of the introduced impurity.
Utamuradova, Sharifa Bekmuradovna; Olimbekov, Zafar; Uteniyazova, Aysara; and Rakhmanov, Dilmurod Abdujabbor ugli
"INFLUENCE OF HIGH RADIATION DOSES ON THE BEHAVIOR OF TRANSITION ELEMENT IMPURITIES IN SILICON,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
, Article 13.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss4/13