•  
  •  
 

Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

it was Found that the presence of Cr, Fe, Mn and Co atoms in the silicon volume, regardless of the type and state of the introduced impurity, leads to a decrease in the efficiency of the introduction of A-centers and E-centers by several times. In addition, it was found that at high doses of radiation, the kinetics of accumulation of E-centers depends on the charge state of the introduced impurity.

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.