The paper presents the results of study of properties of strongly compensated silicon doped with impurities that create deep levels of various nature. The results show that in strongly compensated silicon samples doped with impurities in contrast to intrinsic semiconductors, huge photosensitivity, magnetic resistance and thermal sensitivity are observed.
Ayupov, Kutub; Mavlonov, Giyosiddin; Valiyev, Sirojiddin; and Shergoziyev
"POSSIBILITIES OF USING HIGHLY COMPENSATED SILICON IN ELECTRONICS,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
, Article 12.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss4/12