•  
  •  
 

Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The paper presents the results of study of properties of strongly compensated silicon doped with impurities that create deep levels of various nature. The results show that in strongly compensated silicon samples doped with impurities in contrast to intrinsic semiconductors, huge photosensitivity, magnetic resistance and thermal sensitivity are observed.

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.