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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

It is shown that, depending on the temperature, the concentration of electrically active nickel can increase by 1-1.5 orders of magnitude. It is proved that the introduction of nickel into silicon allows one to obtain a material with stable electrophysical parameters. The conditions for obtaining semiconductor materials are determined, diffusion regimes are established that make it possible to obtain samples with specific resistance ρ> 2ˑ105 Ohm · cm.

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