It is shown that, depending on the temperature, the concentration of electrically active nickel can increase by 1-1.5 orders of magnitude. It is proved that the introduction of nickel into silicon allows one to obtain a material with stable electrophysical parameters. The conditions for obtaining semiconductor materials are determined, diffusion regimes are established that make it possible to obtain samples with specific resistance ρ> 2ˑ105 Ohm · cm.
Nasriddinov, Sayfillo Saidovich; Ismailov, Shuxrat; Esbergenov, Daryo; and Mannonov, Muzaffar
"CRITERIA FOR OBTAINING COMPENSATED NICKEL SILICON,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
, Article 10.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss4/10