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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

In this manuscript, it was analysed that the temperature dependence of the photoelectric conductivity of hydrogenated amorphous silicon (a-Si:H), heavily and slightly doped with boron. Lightly doped a-Si:H exhibits intrinsic conductivity. The plot of the photoelectric conductivity depending on the doping consists of several plots. To explain this behavior of photoelectric conductivity, we used the a-Si:H mobility gap model, which charge states are distributed at different discrete levels. These levels are represented as hole traps with a concentration of Ntp and D0, D+ - centers of charges with a concentration of N0+, N00. When the sample is illuminated with light, carriers are captured and recombined. For this case, the electro neutrality equations for the kinetics of charge exchange and the continuity equations were compiled.

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