•  
  •  
 

Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Issue 4

Articles

PDF

INVESTIGATION OF DEFECT FORMATION PROCESSES IN SILICON WITH IRON IMPURITY
Shakhruh Hojakbarovich Daliyev, Jonibek Jumayevich Khamdamov, Yuldoshali Ravshanov, and Daryabay Esbergenov

PDF

PHOTOELECTRIC MEASUREMENTS OF SELENIUM DOPED SILICON
A. Mavlyanov, A. Urakov, and A. Narbayev

PDF

STRUCTURAL FEATURES OF THE THIN-FILM N-ZnO/P-Si HETEROJUNCTION
Rembeza Stanislav, Akramjon Boboev, Tat'yana Men'shikova, and Tamara Svistova

PDF

THE POSITIVE FEEDBACK AMPLIFICATION MECHANISM OF THE INJECTION PHOTODIODE BASED ON LARGE-BLOCK CdTe FILMS
Abatbay Uteniyazov, Kanatbay Ismailov, Makset Nsanbaev, and Elmira Ysenbaeva

PDF

THE INFLUENCE OF THE MICROWAVE FIELD ON THE CHARACTERISTICS OF THE p-n JUNCTION
Gafur Gulyamov, Gulomqodir Dadamirzaev, Muhammadjon Dadamirzayev, and Mamura Kosimova

PDF

COMPACT SPECKLE INTERFEROMETER FOR DIGITAL SHEAROGRAPHY
Zakir Tahirovich Azamatov, Valeriy Kim, and Murod Akbarali ugli Yoldoshev

PDF

CRITERIA FOR OBTAINING COMPENSATED NICKEL SILICON
Sayfillo Saidovich Nasriddinov, Shuxrat Ismailov, Daryo Esbergenov, and Muzaffar Mannonov

PDF

POSSIBILITIES OF USING HIGHLY COMPENSATED SILICON IN ELECTRONICS
Kutub Ayupov, Giyosiddin Mavlonov, Sirojiddin Valiyev, and Shergoziyev

PDF

INFLUENCE OF HIGH RADIATION DOSES ON THE BEHAVIOR OF TRANSITION ELEMENT IMPURITIES IN SILICON
Sharifa Bekmuradovna Utamuradova, Zafar Olimbekov, Aysara Uteniyazova, and Dilmurod Abdujabbor ugli Rakhmanov