The influence of external factors on the defective structure of silicon doped with tungsten has been studied using IR absorption and x-ray topography. A correlation was found between a decrease in the concentration of interstitial optically active oxygen and deep levels associated with tungsten atoms with a change in the size of large clusters of defective particles of various shapes in Si during annealing.
Daliev, Sh.; Paluanova, A.; Ergashev, J.; and Rakhimov, A.
"DEFECT STRUCTURE OF SILICON WITH AN IMPURITY OF TUNGSTEN UNDER THE INFLUENCE OF EXTERNAL FACTORS,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
, Article 9.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss3/9