•  
  •  
 

Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The influence of external factors on the defective structure of silicon doped with tungsten has been studied using IR absorption and x-ray topography. A correlation was found between a decrease in the concentration of interstitial optically active oxygen and deep levels associated with tungsten atoms with a change in the size of large clusters of defective particles of various shapes in Si during annealing.

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.