Euroasian Journal of Semiconductors Science and Engineering
Article Title
DEFECT STRUCTURE OF SILICON WITH AN IMPURITY OF TUNGSTEN UNDER THE INFLUENCE OF EXTERNAL FACTORS
Abstract
The influence of external factors on the defective structure of silicon doped with tungsten has been studied using IR absorption and x-ray topography. A correlation was found between a decrease in the concentration of interstitial optically active oxygen and deep levels associated with tungsten atoms with a change in the size of large clusters of defective particles of various shapes in Si during annealing.
Recommended Citation
Daliev, Sh.; Paluanova, A.; Ergashev, J.; and Rakhimov, A.
(2020)
"DEFECT STRUCTURE OF SILICON WITH AN IMPURITY OF TUNGSTEN UNDER THE INFLUENCE OF EXTERNAL FACTORS,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
:
Iss.
3
, Article 9.
Available at:
https://uzjournals.edu.uz/semiconductors/vol2/iss3/9