Annotation. The report considers the features of semiconductor instrumentation of a large sensitive surface and space charge region based on silicon single crystals. Studied and shown the functional features and purpose of the developed devices "Radonometer", "Radiometer", coordinate-sensitive structures, etc. Their functional purposes in science and technology are shown. The features of p-n and p-i-n structures based on single crystals of wafers with a diameter of d˃60 mm and a thickness of W˃1,5 mm are shown.
Muminov, R.; Ergashev, G.; Radjapov, B.; and Rumyantseva, E.
"FEATURES OF SILICON p-n STRUCTURES WITH A LARGE SENSITIVE SURFACE AND A VOLUME CHARGE AREA,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
, Article 5.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss3/5