The isochronous annealing of radiation defects, that occur during irradiation of MIS structures by - quanta with displacement on a metal electrode was investigated. it was found that the built-in charge and bulk states of the dielectric are annealed at 250oC, surface states – at 350oC, and the characteristic radiation defects in the Si-SiO2 transition layer is fully annealed only at 400oC
Khusanov, Z.; Daliev, Kh.; Allayarov; and Erugliyev, U.
"THE INFLUENCE OF EXTERNAL FACTORS ON PROPERTIES OF IRRADIATED SILICON MIS STRUCTURES,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
, Article 37.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss3/37