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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The isochronous annealing of radiation defects, that occur during irradiation of MIS structures by  - quanta with displacement on a metal electrode was investigated. it was found that the built-in charge and bulk states of the dielectric are annealed at 250oC, surface states – at 350oC, and the characteristic radiation defects in the Si-SiO2 transition layer is fully annealed only at 400oC

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