In this work are considered for the first time thermal vibrational and wave processes occurring in a silicon crystal lattice with nickel impurities that create deep energy levels in its band gap under pulsed hydrostatic compression. Theoretical calculations showed that the increase in temperature of the samples under dynamic compression is mainly associated with a change in the temperature of the surrounding fluid. The derived differential equation shows that at dynamic pressure (at high rates of rise of hydrostatic pressure), wave thermodynamic processes occur.
Khamidov, R. and Mamatkarimov, O.
"TEMPERATURE - WAVE EFFECTS OCCURRING IN SEMICONDUCTORS WITH DEEP IMPURITY CENTERS UNDER PULSED HYDROSTATIC COMPRESSION,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
, Article 3.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss3/3