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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

Тhe processes of defect formation in Si with t-ion admixtures have been studied using IR absorption and capacitive spectroscopy. The kinetics of deep-level annealing was studied and the activation energies of deep-level annealing of T-ions were determined. It was found that the efficiency of formation and the kinetics of annealing GU depends on the content of oxygen and carbon in silicon.

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