Euroasian Journal of Semiconductors Science and Engineering
Article Title
DEFECT FORMATION DURING LOW-TEMPERATURE ANNEALING OF SILICON DOPED WITH ION IMPURITIES
Abstract
Тhe processes of defect formation in Si with t-ion admixtures have been studied using IR absorption and capacitive spectroscopy. The kinetics of deep-level annealing was studied and the activation energies of deep-level annealing of T-ions were determined. It was found that the efficiency of formation and the kinetics of annealing GU depends on the content of oxygen and carbon in silicon.
Recommended Citation
Utamuradova, Sh.; Uteniyazova, A.; Fayzullaev, K.; and Naurzalieva, E.
(2020)
"DEFECT FORMATION DURING LOW-TEMPERATURE ANNEALING OF
SILICON DOPED WITH ION IMPURITIES,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
:
Iss.
3
, Article 2.
Available at:
https://uzjournals.edu.uz/semiconductors/vol2/iss3/2