Тhe processes of defect formation in Si with t-ion admixtures have been studied using IR absorption and capacitive spectroscopy. The kinetics of deep-level annealing was studied and the activation energies of deep-level annealing of T-ions were determined. It was found that the efficiency of formation and the kinetics of annealing GU depends on the content of oxygen and carbon in silicon.
Utamuradova, Sh.; Uteniyazova, A.; Fayzullaev, K.; and Naurzalieva, E.
"DEFECT FORMATION DURING LOW-TEMPERATURE ANNEALING OF
SILICON DOPED WITH ION IMPURITIES,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
, Article 2.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss3/2