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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The results of experiments on the study of Raman scattering of light in samples of single-crystal silicon implanted with 40 keV manganese ions (IS) are presented. Three characteristic regions were determined from the Raman spectra: the dose of the first corresponds to the accumulation of point defects (3,1•1012 to 1,2•1013 cm-2), to the second (3,2•1013 to 3,0•1014 cm-2) and nuclei of the amorphous phase, the third (3,0•1014 ÷ 6,0•1014 cm-2 and higher) complete amorphization of the near-surface layer of silicon.

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