The results of experiments on the study of Raman scattering of light in samples of single-crystal silicon implanted with 40 keV manganese ions (IS) are presented. Three characteristic regions were determined from the Raman spectra: the dose of the first corresponds to the accumulation of point defects (3,1•1012 to 1,2•1013 cm-2), to the second (3,2•1013 to 3,0•1014 cm-2) and nuclei of the amorphous phase, the third (3,0•1014 ÷ 6,0•1014 cm-2 and higher) complete amorphization of the near-surface layer of silicon.
Arzikulov, E.; Salakhitdinov, F.; and Tashboev, M.
"STUDY OF STRUCTURAL DISORDERING OF SILICON IONIC IMPLANTED WITH MANGANESE BY THE METHOD OF COMBINATION LIGHT SCATTERING (RS).,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
, Article 14.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss3/14