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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The paper concerns the results of the study of radiation treatment of Schottky's barriers with a micro relief interface. Changes in electrophysical parameters manifested in the evolution of volt-ampere characteristics with increasing radiation dose are shown. The analysis of IV curve by using the equivalent scheme and taking into account all the canals of charge transfer and the presence of substrate resistance shows a higher resistance of micro-textured structures to radiation treatment.

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