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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The phenomenon of cluster migration diffusion of impurity nickel atoms in the silicon lattice is experimentally shown. It was established that clusters move in a silicon lattice with a large diffusion coefficient of the order of D ~ 10–9 cm2/s at T = 800 °С. The composition of the clusters of impurity nickel atoms was determined and a model of their structure was proposed, as well as a diffusion mechanism.

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