The phenomenon of cluster migration diffusion of impurity nickel atoms in the silicon lattice is experimentally shown. It was established that clusters move in a silicon lattice with a large diffusion coefficient of the order of D ~ 10–9 cm2/s at T = 800 °С. The composition of the clusters of impurity nickel atoms was determined and a model of their structure was proposed, as well as a diffusion mechanism.
Bakhadirkhanov, M.; Ismaylov, B.; and Tachilin, S.
"DIFFUSION OF CLUSTERS OF IMPURITY NICKEL ATOMS IN A SILICON LATTICE,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
, Article 1.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss3/1