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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

In this work we report the depth inhomogeneity study of MBE grown ZnSe/(001) GaAs epilayers of different thickness by X-ray photoluminescence methods. It is shown that all these epilayers consist of three regions with different extended defect and impurity concentration. There are pressure strain decreasing in the well and dilution strain decreasing in the buffer layer. These processes cause low crystal qualities of the obtained layers which in turn stimulates degradation processes. One of the ways to influence on characteristics of border section of А2В6/GaAs structure is utilization of thin intermediate layers which is able to halt interdiffusion of the components of a layer and substrate

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